symbol v ds v gs i dm t j , t stg symbol ty p max 31 40 59 75 r jl 16 24 maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r ja c/w c/w absolute maximum ratings t v v 20 pulsed drain current b power dissipation t a =25c gate-source voltage drain-source voltage maximum junction-to-ambient a steady-state 11 9.3 50 continuous drain current a maximum units parameter t a =25c t a =70c 30 w junction and storage temperature range a p d c 3 2.1 -55 to 150 t a =70c i d AO4422 features v ds (v) = 30v i d = 11a r ds(on) < 15m ? (v gs = 10v) r ds(on) < 24m ? (v gs = 4.5v) the AO4422 uses advanced trench technology to provide excellent r ds(on) and low gate charge. this device is suitable for use as a load switch or in pwm applications. the source leads are separated to allow a kelvin connection to the source, which may be used to bypass the source inductance. soic-8 g s s s d d d d g d s general description effect transistor n-channel enhancement mode field www.freescale.net.cn 1 / 4
AO4422 symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 100 na v gs(th) 1 1.8 3 v i d(on) 40 a 12.6 15 t j =125c 16.8 21 19.6 24 m ? g fs 25 s v sd 0.75 1 v i s 4.3 a c iss 1040 pf c oss 180 pf c rss 110 pf r g 0.7 ? q g (10v) 19.8 nc q g (4.5v) 9.8 nc q gs 2.5 nc q gd 3.5 nc t d(on) 4.5 ns t r 3.9 ns t d(off) 17.4 ns t f 3.2 ns t rr 17.5 ns q rr 7.6 nc body diode reverse recovery time body diode reverse recovery charge i f =11a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =250 a, v gs =0v v gs =4.5v, v ds =5v v gs =10v, i d =11a reverse transfer capacitance i f =11a, di/dt=100a/ s electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss a gate threshold voltage v ds =v gs i d =250 a v ds =24v, v gs =0v v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current r ds(on) static drain-source on-resistance forward transconductance diode forward voltage m ? v gs =4.5v, i d =10a i s =1a,v gs =0v v ds =5v, i d =11a total gate charge gate source charge gate resistance v gs =0v, v ds =0v, f=1mhz turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =1.35 ? , r gen =3 ? turn-off fall time maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters v gs =10v, v ds =15v, i d =11a total gate charge gate drain charge v gs =0v, v ds =15v, f=1mhz switching parameters a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any a given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. www.freescale.net.cn 2 / 4
AO4422 typical electrical and thermal characteristics 0 5 10 15 20 25 30 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =3v 3.5v 4v 4.5v 10v 0 4 8 12 16 20 1.5 2 2.5 3 3.5 4 v gs (volts) figure 2: transfer characteristics i d (a) 10 12 14 16 18 20 22 24 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v v gs =4.5v 10 20 30 40 50 60 246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =10a 25c 125c i d =10a www.freescale.net.cn 3 / 4
AO4422 typical electrical and thermal characteristics 0 2 4 6 8 10 0 4 8 12 16 20 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 250 500 750 1000 1250 1500 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z t ja normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 p s 10ms 1ms 0 .1 s 1s 1 0s dc r ds(on) limited t j(max) =150c t a =25c v ds =15v i d =11a single pulse d=t o n / t t j,pk =t a +p dm .z t ja .r t ja r t ja =40c/w t o n t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 p s www.freescale.net.cn 4 / 4
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